000 00660nam a22001817a 4500
001 ched57397352
005 20240425162610.0
008 110530t xxu||||| |||| 00| 0 eng d
050 _aCD-00388t
099 _c1950
_d1950
100 _aGarcia, Rommel Galang
245 _aCharacterization of gate charging N-Channel Mosfet to determine the effects of different gate bias voltages and temperature conditions
_cRommel Galang Garcia
260 _aManila
_bDe La Salle University
_c2008.
502 _bMaster of Science
_aElectronics and Communications Engineering
630 _aElectronics and communications engineering
942 _cTD
999 _c1701
_d1701