000 | 00660nam a22001817a 4500 | ||
---|---|---|---|
001 | ched57397352 | ||
005 | 20240425162610.0 | ||
008 | 110530t xxu||||| |||| 00| 0 eng d | ||
050 | _aCD-00388t | ||
099 |
_c1950 _d1950 |
||
100 | _aGarcia, Rommel Galang | ||
245 |
_aCharacterization of gate charging N-Channel Mosfet to determine the effects of different gate bias voltages and temperature conditions _cRommel Galang Garcia |
||
260 |
_aManila _bDe La Salle University _c2008. |
||
502 |
_bMaster of Science _aElectronics and Communications Engineering |
||
630 | _aElectronics and communications engineering | ||
942 | _cTD | ||
999 |
_c1701 _d1701 |